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HGTG30N60

Fairchild Semiconductor
Part Number HGTG30N60
Manufacturer Fairchild Semiconductor
Description 600V Planar IGBT Chip
Published Jun 25, 2016
Detailed Description 600V Planar IGBT Chip 600V, 60A, VCE(sat) = 1.8V HGTG30N60 Part HGTG30N60 VCES 600V ICn 60A VCE (sat) Typ 1.8 Die ...
Datasheet PDF File HGTG30N60 PDF File

HGTG30N60
HGTG30N60

Overview
600V Planar IGBT Chip 600V, 60A, VCE(sat) = 1.
8V HGTG30N60 Part HGTG30N60 VCES 600V ICn 60A VCE (sat) Typ 1.
8 Die Size 6.
6 x 6.
6 mm2 See page 2 for ordering part numbers & supply formats Applications Features • AC & DC Motor Controls • Fast Switching & Low Conduction Loss • General Purpose Inverters • High Input Impedance Maximum Ratings • Short Circuit Rated Symbol BVCES VGES IC ICM SCWT TJ, TSTG Parameter Collector to Emitter Voltage Gate to Emitter Voltage Drain Current1 Continuous (TC = 25°C) Continuous (TC = 110°C) Pulsed Collector Current Short Circuit Withstand Time3 VCE = 360V, RG = 3Ω, VGE = 10V, TC = 125°C Operation Junction & Storage Temperature Ratings 600 ±20 75 60 240 10 -55 to 150 Units V V A A A µS °C Static Characteristics, TJ = 25° unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units BVCES ICES IGES Collector to Emitter Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250µA VCE = 600 TJ = 25oC TJ = 125oC VGE = ±20 600 - Notes: 1.
Defined by chip design, not subject to 100% production test at wafer level 2.
Performance will vary based on assembly technique and substrate choice 3.
Repetitive Rating: Pulse width limited by maximum junction temperature - 250 4.
0 ±250 V µA mA nA Page1 Further Information - Contact your Micross sales office or email your enquiry to baredie@micross.
com ©2014 Fairchild Semiconductor Corporation & Micross Components On Characteristics, TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 250µA, VCE = 600V IC = 30A, VGE = 15V IC = 30A, VGE = 15V TC = 125°C Min Typ Max Units 4.
5 5.
.
5 7.
0 - 1.
8 2.
6 - 1.
6 2.
0 V V V Dynamic Characteristics2, TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions VGE = 15V Qg On-State Gate Charge VCE = 300V, IC = 30A VGE = 20V Min Typ Max Units - 225 - 300 - nC Switching C...


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