Part Number
|
TGF2023-2-20 |
Manufacturer
|
Qorvo |
Description
|
SiC HEMT |
Published
|
May 8, 2020 |
Detailed Description
|
TGF2023-2-20
® 100 W, 32 V, DC to 14 GHz, Discrete Power GaN on SiC HEMT
Product Overview
The Qorvo TGF2023-2-20 is a di...
|
Datasheet
|
TGF2023-2-20
|
Overview
TGF2023-2-20
® 100 W, 32 V, DC to 14 GHz, Discrete Power GaN on SiC HEMT
Product Overview
The Qorvo TGF2023-2-20 is a discrete 20 mm GaN on SiC HEMT which operates from DC-14 GHz.
The TGF2023-220 is designed using Qorvo’s proven QGaN25 production process.
This process features advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions.
The TGF2023-2-20 typically provides 50.
2 dBm of saturated output power with power gain of 14 dB at 6 GHz.
The maximum power added efficiency is 65.
1% which makes the TGF2023-2-20 appropriate for high efficiency applications.
Lead-free and RoHS compliant
Functional Block Diagram
1-16
17
Pad Configuratio...
Similar Datasheet