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TGF2023-2-20

Part Number	TGF2023-2-20
Manufacturer	Qorvo
Description	SiC HEMT
Published	May 8, 2020
Detailed Description	TGF2023-2-20 ® 100 W, 32 V, DC to 14 GHz, Discrete Power GaN on SiC HEMT Product Overview The Qorvo TGF2023-2-20 is a di...
Datasheet	TGF2023-2-20 PDF File

Overview

TGF2023-2-20 ® 100 W, 32 V, DC to 14 GHz, Discrete Power GaN on SiC HEMT Product Overview The Qorvo TGF2023-2-20 is a discrete 20 mm GaN on SiC HEMT which operates from DC-14 GHz.
The TGF2023-220 is designed using Qorvo’s proven QGaN25 production process.
This process features advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions.
The TGF2023-2-20 typically provides 50.
2 dBm of saturated output power with power gain of 14 dB at 6 GHz.
The maximum power added efficiency is 65.
1% which makes the TGF2023-2-20 appropriate for high efficiency applications.
Lead-free and RoHS compliant Functional Block Diagram 1-16 17 Pad Configuratio...

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