isc Silicon
NPN Power
Transistor
2SC6076
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 160V(Min) ·Low Collector-Emitter Saturation Voltage-
: VCE(sat)=0.
5V(Max) @IC= 1A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Power Amplifier Applications ·Power Switching Applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
160
V
VCEO
Collector-Emitter Voltage
160
V
VEBO
Emitter-Base Voltage
9
V
IC
Collector Current-Continuous
3.
0
A
ICM
Collector Current-Peak
5.
0
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
...