isc Silicon
NPN Darlington Power
Transistor
DESCRIPTION ·Collector Current -IC= 12A ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 2.
0V(Max.
)@ IC= 5A ·Complement to Type BDV64/A/B/C ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio output stages and general amplifier
and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BDV65
60
VCBO
Collector-Base Voltage
BDV65A
80
V
BDV65B
100
BDV65C
120
BDV65
60
VCEO
Collector-Emitter Voltage
BDV65A
80
V
BDV65B
100
BDV65C
120
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
12
A
ICM
Collector Current-...