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BDV64A

INCHANGE
Part Number BDV64A
Manufacturer INCHANGE
Description PNP Transistor
Published Sep 7, 2020
Detailed Description isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector Current -IC= -12A ·Collector-Emitter Saturation Volt...
Datasheet PDF File BDV64A PDF File

BDV64A
BDV64A

Overview
isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector Current -IC= -12A ·Collector-Emitter Saturation Voltage- : VCE(sat)= -2.
0V(Max.
)@ IC= -5A ·Complement to Type BDV65/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDV64 -60 VCBO Collector-Base Voltage BDV64A BDV64B -80 -100 BDV64C -120 BDV64 -60 VCEO Collector-Emitter Voltage BDV64A BDV64B -80 -100 BDV64C -120 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -12 ICM Collector Current-Peak -20 IB Base Current-Continuous -0.
5 Collector Power Dissipation PC @ TC=25℃ Collector Power Dissipation @ Ta=25℃ 125 3.
5 TJ Junction Temperature 150 Tstg Storage Temperature Range -65~150 UNIT V V V A A A W ℃ ℃ BDV64/A/B/C isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trad...


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