isc Silicon
NPN Power
Transistors
DESCRIPTION High Switching Speed ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 450V (Min)-BUW132 500V (Min)-BUW132A
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS ·Designed for use in very fast switching applications in
inductive circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MAX
UNIT
BUW132
850
VCES
Collector- Emitter Voltage(VBE= 0)
V
BUW132A
1000
BUW132
450
VCEO
Collector-Emitter Voltage
V
BUW132A
500
VEBO IC ICM PC Tj Tstg
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak Collector Power Dissipation @TC=25℃ Junction Temperature
Storage Tempe...