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BUW24

NPN Transistor

Description

isc Silicon NPN Power Transistor BUW24 DESCRIPTION ·Collector-Emitter Breakdown Voltage- :V(BR)CEO= 350V(Min.) ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in switching mode power supply. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Colle...


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