isc Silicon
NPN Power
Transistor
INCHANGE Semiconductor
2SC5855
DESCRIPTION ·High speed switching ·High voltage ·Low saturation voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Horizontal deflection output for super high resolution ·Display color TV digital TV
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
700
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
10
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
5
A
50
W
150
℃
Tstg
Storage Te...