isc N-Channel MOSFET
Transistor
IRF630N，IIRF630N
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.
3Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRIPTION · Efficient and reliable device for use in a wide variety of applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
200
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
9.
3
IDM
Drain Current-Single Pulsed
37
PD
Total Dissipation @TC=25℃
82
Tj
Max.
Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
·THERMAL CHARACTER...