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IRF630A

Fairchild Semiconductor
Part Number IRF630A
Manufacturer Fairchild Semiconductor
Description Advanced Power MOSFET
Published Apr 16, 2005
Detailed Description Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved...
Datasheet PDF File IRF630A PDF File

IRF630A
IRF630A

Overview
Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.
) @ VDS = 200V Low RDS(ON) : 0.
333 Ω (Typ.
) 1 2 3 IRF630A BVDSS = 200 V RDS(on) = 0.
4 Ω ID = 9 A TO-220 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C ) Continuous Drain Current (TC=100 C ) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 oC ) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp.
for Soldering Purposes, 1/8” from case for 5-seconds 1 O o o Value 200 9 5.
7 36 + _ 30 162 9 7.
2 5.
0 72 0.
57 - 55 to +150 Units V A A V mJ A mJ V/ns W W/ oC O 1 O 1 O 3 O 2 o C 300 Thermal Resist...


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