DatasheetsPDF.com

IRF630B

Fairchild Semiconductor
Part Number IRF630B
Manufacturer Fairchild Semiconductor
Description 200V N-Channel MOSFET
Published Apr 16, 2005
Detailed Description IRF630B/IRFS630B IRF630B/IRFS630B 200V N-Channel MOSFET General Description These N-Channel enhancement mode power fiel...
Datasheet PDF File IRF630B PDF File

IRF630B
IRF630B

Overview
IRF630B/IRFS630B IRF630B/IRFS630B 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.
Features • • • • • • 9.
0A, 200V, RDS(on) = 0.
4Ω @VGS = 10 V Low gate charge ( typical 22 nC) Low Crss ( typical 22 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G G DS TO-220 IRF Series GD S TO-220F IRFS Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) IRF630B 200 9.
0 5.
7 36 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) IRFS630B 9.
0 * 5.
7 * 36 * 160 9.
0 7.
2 5.
5 Units V A A A V mJ A mJ V/ns W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 72 0.
57 -55 to +150 300 38 0.
3 * Drain current limited by maximum junction temperature.
Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction-to-Case Max.
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient Max.
IRF630B 1.
74 0.
5 62.
5 IRFS630B 3.
33 -62.
5 Units °C/W °C/W °C/W ©2002 Fairchild Semiconductor Corporation Rev.
B, December 2002 IRF630B/IRFS630B Electrical Characteristics Symbol Parameter TC = 25°C unless oth...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)