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IRF630A

Inchange Semiconductor
Part Number IRF630A
Manufacturer Inchange Semiconductor
Description N-Channel MOSFET Transistor
Published Apr 2, 2011
Detailed Description INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRF630A DESCRIPTION ·Drain Current ...
Datasheet PDF File IRF630A PDF File

IRF630A
IRF630A

Overview
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRF630A DESCRIPTION ·Drain Current –ID=9A@ TC=25℃ ·Drain Source Voltage: VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.
4Ω(Max) ·Fast Switching Speed ·Low Drive Requirement APPLICATIONS ·This device is n-channel, enhancement mode, power MOSFET designed especially for high power, high speed applications, such as switching power supplies,UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VDSS VGS ID Ptot Tj Tstg ARAMETER Drain-Source Voltage (VGS=0) Gate-Source Voltage Drain Current-continuous@ TC=25℃ Total Dissipation@TC=25℃ Max.
Operating Junction Temperature Storage Temperature Range w ww s c s .
i VALUE 200 ±30 9 72 150 -55~150 n c .
i m e UNIT V V A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.
74 62.
5 UNIT ℃/W ℃/W Rth j-a Thermal Resistance,Junc...


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