MOSFETs Silicon N-Channel MOS (DTMOS)
TK20E60W5
1.
Applications
• Switching Voltage
Regulators
2.
Features
(1) Fast reverse recovery time: trr = 110 ns (typ.
) (2) Low drain-source on-resistance: RDS(ON) = 0.
15 Ω (typ.
)
by used to Super Junction Structure : DTMOS (3) Easy to control Gate switching (4) Enhancement mode: Vth = 3 to 4.
5 V (VDS = 10 V, ID = 1 mA)
3.
Packaging and Internal Circuit
TK20E60W5
TO-220
1: Gate 2: Drain (Heatsink) 3: Source
©2015 Toshiba Corporation
1
Start of commercial production
2015-10
2015-10-22 Rev.
3.
0
TK20E60W5
4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage Gate-source...