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TK20E60W

Part Number	TK20E60W
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Nov 9, 2020
Detailed Description	Isc N-Channel MOSFET Transistor TK20E60W ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 155mΩ (MAX) ·Enhancement...
Datasheet	TK20E60W PDF File

Overview

Isc N-Channel MOSFET Transistor TK20E60W ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 155mΩ (MAX) ·Enhancement mode: Vth =2.
7 to 3.
7V (VDS = 10 V, ID=1mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 20 A IDM Drain Current-Single Pulsed 80 A PD Total Dissipation @TC=25℃ 165 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER...

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