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TK20E60W5

INCHANGE
Part Number TK20E60W5
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Nov 9, 2020
Detailed Description Isc N-Channel MOSFET Transistor TK20E60W5 ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 175mΩ (MAX) ·Enhancemen...
Datasheet PDF File TK20E60W5 PDF File

TK20E60W5
TK20E60W5

Overview
Isc N-Channel MOSFET Transistor TK20E60W5 ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 175mΩ (MAX) ·Enhancement mode: Vth = 3 to 4.
5V (VDS = 10 V, ID=1mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 20 A IDM Drain Current-Single Pulsed 80 A PD Total Dissipation @TC=25℃ 165 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 0.
757 UNIT ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark Isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltag...


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