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TK20E60U

Toshiba
Part Number TK20E60U
Manufacturer Toshiba
Description Silicon N-Channel MOSFET
Published Nov 3, 2013
Detailed Description TK20E60U MOSFETs Silicon N-Channel MOS (DTMOS) TK20E60U 1. Applications • Switching Voltage Regulators 2. Features (1...
Datasheet PDF File TK20E60U PDF File

TK20E60U
TK20E60U

Overview
TK20E60U MOSFETs Silicon N-Channel MOS (DTMOS) TK20E60U 1.
Applications • Switching Voltage Regulators 2.
Features (1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 0.
165 Ω (typ.
) High forward transfer admittance: |Yfs| = 12 S (typ.
) Low leakage current: IDSS = 100 µA (max) (VDS = 600 V) Enhancement mode: Vth = 3.
0 to 5.
0 V (VDS = 10 V, ID = 1 mA) 3.
Packaging and Internal Circuit 1: Gate (G) 2: Drain (D)(Heatsink) 3: Source (S) TO-220 1 2012-02-06 Rev.
1.
0 Free Datasheet http://www.
datasheet4u.
com/ TK20E60U 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Repetitive avalanche energy Reverse drain current (DC) Reverse drain current (pulsed) Channel temperature Storage temperature (Tc = 25) (Note 2) (Note 3) (Note 3) (Note 1) (Note 1) (Note 1) (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR EAR IDR IDRP Tch Tstg Rating 600 ±30 20 40 190 144 10 19 20 40 150 -55 to 150  W mJ A mJ A A Unit V Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
5.
Thermal Characteristics Characteristics Channel-to-case thermal resistance Channel-to-ambient thermal resistance Symbol Rth(ch-c) Rth(ch-a) Max 0.
658 83.
3 Unit /W Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: VDD = 90 V, Tch = 25 (initial), L = 2.
52 mH, RG = 2...


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