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TK20E60W

Toshiba Semiconductor
Part Number TK20E60W
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Published Sep 11, 2014
Detailed Description TK20E60W MOSFETs Silicon N-Channel MOS (DTMOS) TK20E60W 1. Applications • Switching Voltage Regulators 2. Features (1...
Datasheet PDF File TK20E60W PDF File

TK20E60W
TK20E60W

Overview
TK20E60W MOSFETs Silicon N-Channel MOS (DTMOS) TK20E60W 1.
Applications • Switching Voltage Regulators 2.
Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.
13 Ω (typ.
) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 2.
7 to 3.
7 V (VDS = 10 V, ID = 1 mA) 3.
Packaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source TO-220 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Reverse drain current (DC) Reverse drain current (pulsed) Channel temperature Storage temperature Mounting torque (Note 1) (Note 1) (Tc = 25) (Note 2) (Note 1) (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR IDR IDRP Tch Tstg TOR Rating 600 ±30 20 80 165 200 5 20 80 150 -55 to 150 0.
6 Nm  W mJ A A Unit V Note: Using continuously under heavy loads (e.
g.
t...


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