JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD
TO-220 Plastic-Encapsulate
Transistors
3DD13007
TRANSISTOR NPN
FEATURES
Power dissipation
PCM : 2 W
Collector current
com
ICM: 8 A Collector-base voltage
Tamb=25
V(BR)CBO : 700 V Operating and storage junction temperature range
TJ Tstg: -55 to +150
TO 220
1.
BASE 2.
COLLECTOR 3.
EMITTER
123
ELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO Ic= 1mA IE=0
700
V
Collector-emitter breakdown voltage V(BR)CEO Ic= 10m A IB=0
400
V
Emitter-base breakdown voltage
V(BR)EBO
IE= 1mA IC=0
9
V
Collector cut-off...