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13001

Elite
Part Number 13001
Manufacturer Elite
Description NPN Epitaxial Silicon Transistor
Published Mar 31, 2014
Detailed Description 13001 NPN Epitaxial Silicon Transistor Features Collector-Emitter Voltage: VCEO= 400V Collector Dissipation: PC(max)= 1...
Datasheet PDF File 13001 PDF File

13001
13001

Overview
13001 NPN Epitaxial Silicon Transistor Features Collector-Emitter Voltage: VCEO= 400V Collector Dissipation: PC(max)= 1000mW TO-126 Absolute Maximum Ratings (TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ TSTG Rating 600 400 7 200 1000 150 -55~+150 Unit V V V mA mW o o C C 1.
Emitter 2.
Collector 3.
Base Electrical Characteristics (TA=25oC) Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-emitter Voltage Transition Frequency Fall Time Storage Time Symbol BVCBO BVCEO BVEBO ICBO ICEO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) VBE ff tf ts Test Conditions IC=100µA, IE=0 IC=1mA, IB=0 IE=100µA, IC=0 VCB=600V, IE=0 VCE=400V, IB=0 VEB=7V, IC=0 VCE=20V, IC=20mA VCE=10V, IC=0.
25mA IC=50mA, IB=10mA IC=50mA, IB=10mA IE= 100mA VCE=20V, IC=20mA f=1MHz IC=50mA, IB1=-1B2=5mA, Vcc= 45V 8 0.
3 1.
5 MHz µS µS 10 5 0.
5 1.
2 1.
1 V V V Min 600 400 7 100 200 100 40 Max Unit V V V £g A £g A £g A hFE(1) CLASSIFICATION Classification hFE(1) 10-15 15-20 20-25 25-30 30-35 35-40 Elite Enterprises (H.
K.
) Co.
, Ltd.
Flat 2505, 25/F.
, Nanyang Plaza, 57 Hung To Road, Kwun Tong, H.
K.
Tel: (852) 2723-3122 Fax: (852) 2723-3990 Email: info@elite-ent.
com.
hk /1 Part No.
: 13001 Page: 1 Free Datasheet http://www.
Datasheet4U.
com ...


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