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13003

STMicroelectronics
Part Number 13003
Manufacturer STMicroelectronics
Description HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
Published Dec 5, 2021
Detailed Description ST13003, ST13003-K High voltage fast-switching NPN power transistor 3 2 1 SOT-32 Figure 1. Internal schematic diagram C...
Datasheet PDF File 13003 PDF File

13003
13003

Overview
ST13003, ST13003-K High voltage fast-switching NPN power transistor 3 2 1 SOT-32 Figure 1.
Internal schematic diagram C(2) B(3) Datasheet - production data Features • High voltage capability • Low spread of dynamic parameters • Very high switching speed Applications • Electronic ballast for fluorescent lighting (CFL) • SMPS for battery charger Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability.
It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.
SC06960r E(1) Part number ST13003 ST13003-K Marking 13003 13003 Table 1.
Device summary Package SOT-32 SOT-32 June 2013 This is information on a product in full production.
DocID13533 Rev 5 Packaging Tube Bag 1/10 www.
st.
com Electrical ratings 1 Electrical ratings ST13003, ST13003-K Symbol Table 2.
Absolute maximum ratings Parameter Value Unit VCES VCEO VEBO IC ICM IB IBM PTOT TSTG TJ Collector-emitter voltage (VBE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0, IB = 0.
75 A, tP < 10 μs) Collector current Collector peak current (tP < 5 ms) Base current Base peak current (tP < 5 ms) Total dissipation at TC = 25 °C Storage temperature Operating junction temperature 700 V 400 V V(BR)EBO V 1.
5 A 3 A 0.
75 A 1.
5 A 40 W -55 to 150 °C -40 to 150 °C Symbol Table 3.
Thermal data Parameter RthJC Thermal resistance junction-case max.
Value 3.
1 Unit °C/W 2/10 DocID13533 Rev 5 ST13003, ST13003-K 2 Electrical characteristics Electrical characteristics Tcase = 25 °C unless otherwise specified.
Symbol Table 4.
Electrical characteristics Parameter Test conditions Min.
Typ.
Max.
Unit Collector cut-off current VCE = 700 V ICES (VBE = 0) VCE = 700 V TC = 125 °C 1 mA 5 mA Emitter-Base breakdown V(BR)EBO voltage (IC = 0) IE = 10 mA 9 18 V (1) Collector-emitter VCEO(sus) sustaining voltage (...


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