Dual, N & P-Channel, Digital FET
FDC6321C
General Description These dual N & P Channel logic level enhancement mode field
effect
transistors are produced using onsemi’s proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on−state resistance.
This device has been designed especially for low voltage applications as a replacement for digital
transistors in load switching applications.
Since bias resistors are not required this dual digital FET can replace several digital
transistors with different bias resistors.
Features
• N−Channel 0.
68 A, 25 V
RDS(ON) = 0.
45 W @ VGS = 4.
5 V
• P−Channel −0.
46 A, −25 V
RDS(ON) = 1.
1 W @ VGS = −4.
5 ...