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FDC6321C

Fairchild Semiconductor
Part Number FDC6321C
Manufacturer Fairchild Semiconductor
Description Dual N & P Channel / Digital FET
Published Mar 30, 2005
Detailed Description April 1999 FDC6321C Dual N & P Channel , Digital FET General Description These dual N & P Channel logic level enhanceme...
Datasheet PDF File FDC6321C PDF File

FDC6321C
FDC6321C

Overview
April 1999 FDC6321C Dual N & P Channel , Digital FET General Description These dual N & P Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on-state resistance.
This device has been designed especially for low voltage applications as a replacement for digital transistors in load switching applications.
Since bias resistors are not required this dual digital FET can replace several digital transistors with different bias resistors.
Features N-Ch 25 V, 0.
68 A, RDS(ON) = 0.
45 Ω @ VGS= 4.
5 V P-Ch -25 V, -0.
46 A, RDS(ON) = 1.
1 Ω @ VGS= -4.
5 V.
Very low level gate drive requirements allowing direct operation in 3 V circuits.
VGS(th) < 1.
0V.
Gate-Source Zener for ESD ruggedness.
>6kV Human Body Model Replace multiple dual NPN & PNP digital transistors.
SOT-23 SuperSOTTM-6 Mark:.
321 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D2 S1 D1 4 3 ...


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