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FDC6322C

Fairchild Semiconductor
Part Number FDC6322C
Manufacturer Fairchild Semiconductor
Description Dual N & P Channel / Digital FET
Published Mar 30, 2005
Detailed Description November 1997 FDC6322C Dual N & P Channel , Digital FET General Description These dual N & P Channel logic level enhanc...
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FDC6322C
FDC6322C

Overview
November 1997 FDC6322C Dual N & P Channel , Digital FET General Description These dual N & P Channel logic level enhancement mode field effec transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on-state resistance.
The device is an improved design especially for low voltage applications as a replacement for bipolar digital transistors in load switching applications.
Since bias resistors are not required, this dual digital FET can replace several digital transistors with difference bias resistors.
Features N-Ch 25 V, 0.
22 A, RDS(ON) = 5 Ω @ VGS= 2.
7 V.
P-Ch 25 V, -0.
46 A, RDS(ON) = 1.
5 Ω @ VGS= -2.
7 V.
Very low level gate drive requirements allowing direct operation in 3 V circuits.
VGS(th) < 1.
5 V.
Gate-Source Zener for ESD ruggedness.
>6kV Human Body Model Replace NPN & PNP digital transistors.
SOT-23 SuperSOTTM-6 Mark: .
322 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 4 3 5 2 6...


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