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FDC6321C

ON Semiconductor
Part Number FDC6321C
Manufacturer ON Semiconductor
Description Dual N & P-Channel Digital FET
Published Dec 12, 2021
Detailed Description Dual, N & P-Channel, Digital FET FDC6321C General Description These dual N & P Channel logic level enhancement mode fiel...
Datasheet PDF File FDC6321C PDF File

FDC6321C
FDC6321C

Overview
Dual, N & P-Channel, Digital FET FDC6321C General Description These dual N & P Channel logic level enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on−state resistance.
This device has been designed especially for low voltage applications as a replacement for digital transistors in load switching applications.
Since bias resistors are not required this dual digital FET can replace several digital transistors with different bias resistors.
Features • N−Channel 0.
68 A, 25 V RDS(ON) = 0.
45 W @ VGS = 4.
5 V • P−Channel −0.
46 A, −25 V RDS(ON) = 1.
1 W @ VGS = −4.
5 V • Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits.
VGS(th) < 1.
0 V.
• Gate−Source Zener for ESD Ruggedness.
>6 kV Human Body Model • Replace Multiple Dual NPN & PNP Digital Transistors • This is a Pb−Free Device DATA SHEET www.
onsemi.
com VDSS 25 V VDSS −25 V N−Channel RDS(ON) MAX 0.
45 W @ 4.
5 V ID MAX 0.
68 A P−Channel RDS(ON) MAX 1.
1 W @ −4.
5 V ID MAX −0.
46 A D2 S1 D1 G2 G1S2 TSOT23 6−Lead SUPERSOTt−6 CASE 419BL MARKING DIAGRAM 321 MG G 1 321 = Specific Device Code M = Assembly Operation Month G = Pb−Free Package (Note: Microdot may be in either location) PINOUT 4 3 5 2 6 1 ORDERING INFORMATION Device Package Shipping† FDC6321C TSOT−23−6 (Pb−free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 1999 1 February, 2022 − Rev.
3 Publication Order Number: FDC6321C/D FDC6321C ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter N−Channel P−Channel Unit VDSS, VCC Drain−Source Voltage, Power Supply Voltage 25 VGSS, VIN Gate−Source Voltage 8 ID, IO Drain/Output Current − Continuous 0.
68 − Pulsed 2 −25 ...


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