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FDC6320C

ON Semiconductor
Part Number FDC6320C
Manufacturer ON Semiconductor
Description Dual N & P Channel Digital FET
Published Mar 22, 2020
Detailed Description FDC6320C Dual N & P Channel , Digital FET General Description These dual N & P Channel logic level enhancement mode fie...
Datasheet PDF File FDC6320C PDF File

FDC6320C
FDC6320C

Overview
FDC6320C Dual N & P Channel , Digital FET General Description These dual N & P Channel logic level enhancement mode field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on-state resistance.
The device is an improved design especially for low voltage applications as a replacement for bipolar digital transistors in load switching applications.
Since bias resistors are not required, this dual digital FET can replace several digital transistors with difference bias resistors.
Features N-Ch 25 V, 0.
22 A, RDS(ON) = 5 Ω @ VGS= 2.
7 V.
P-Ch 25 V, -0.
12 A, RDS(ON) = 13 Ω @ VGS= -2.
7 V.
Very low level gate drive requirements allowing direct operation in 3 V circuits.
VGS(th) < 1.
5 V.
Gate-Source Zener for ESD ruggedness.
>6kV Human Body Model Replace NPN & PNP digital transistors.
SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 43 52 61 Absolute Maximum Ratings TA = 25oC unless other wise noted Symbol Parameter N-Channel VDSS, VCC VGSS, VIN ID, IO Drain-Source Voltage, Power Supply Voltage Gate-Source Voltage, Drain/Output Current - Continuous - Pulsed 25 8 0.
22 0.
5 PD Maximum Power Dissipation (Note 1a) (Note 1b) TJ,TSTG ESD Operating and Storage Tempature Ranger Electrostatic Discharge Rating MIL-STD-883D Human Body Model (100pf / 1500 Ohm) THERMAL CHARACTERISTICS RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) RθJC Thermal Resistance, Junction-to-Case (Note 1) 0.
9 0.
7 -55 to 150 6 140 60 P-Channel -25 -8 -0.
12 -0.
5 Units V V A W °C kV °C/W °C/W © 1997 Semiconductor Components Industries, LLC.
October-2017, Rev.
3 Publication Order Number: FDC6320C/D DMOS Electrical Characteristics (TA = 25 OC unless otherwise noted ) Symbol Parameter Conditions OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage ∆BVDSS/∆TJ Breakdown Voltage Temp.
Coefficient IDSS Zero Gate Voltage Drain Current IDSS Zero Gate V...


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