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Part Number
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BAR81W |
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Manufacturer
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Infineon Technologies AG |
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Description
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Silicon RF Switching Diode |
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Published
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Mar 26, 2005 |
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Detailed Description
|
BAR81...
Silicon RF Switching Diode
Designed for use in shunt configuration in
high performance RF switches
High sh...
|
|
Datasheet
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BAR81W
|
Overview
BAR81.
.
.
Silicon RF Switching Diode
Designed for use in shunt configuration in
high performance RF switches
High shunt signal isolation Low shunt insertion loss Optimized for short - open transformation
using lines
BAR81W
4 3
1
2
Type BAR81W
Package SOT343
Configuration single shunt-diode
LS(nH) Marking 0.
15* BBs
* series inductance chip to ground
Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Diode reverse voltage Forward current Total power dissipation Ts 138°C Junction temperature Operating temperature range Storage temperature Thermal Resistance Parameter Junction - soldering point1)
1For
Symbol VR IF Ptot Tj Top Tstg Symbol
RthJS
Value 30 10...
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