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BAR81W

Siemens Semiconductor Group
Part Number BAR81W
Manufacturer Siemens Semiconductor Group
Description Silicon RF Switching Diode Preliminary data (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss)
Published Mar 26, 2005
Detailed Description BAR 81W Silicon RF Switching Diode Preliminary data • Design for use in shunt configuration • High shunt signal isolatio...
Datasheet PDF File BAR81W PDF File

BAR81W
BAR81W

Overview
BAR 81W Silicon RF Switching Diode Preliminary data • Design for use in shunt configuration • High shunt signal isolation • Low shunt insertion loss 3 4 2 1 VPS05605 Type BAR 81W Marking Ordering Code BBs Q62702-A1270 Pin Configuration Package 1 = A1 2 = C2 3 = A2 4 = C1 SOT-343 Maximum Ratings Parameter Diode reverse voltage Forward current Total power dissipation, T S = 138 °C Junction temperature Operating temperature range Storage temperature Thermal Resistance Junction - ambient 1) Symbol Value 30 100 100 150 -55 .
.
.
+125 -55 .
.
.
+150 Unit V mA mW °C °C VR IF Ptot Tj Top Tstg RthJA RthJS ≤ 200 ≤ 120 K/W Junction - soldering point 1) Package mounted on alumina 15mm x 16.
7mm x 0.
7mm Semiconductor Group Semiconductor Group 11 Sep-04-1998 1998-11-01 BAR 81W Electrical Characteristics at TA = 25 °C, unless otherwise specified.
Parameter Characteristics Reverse current Symbol min.
Values typ.
0.
93 max.
20 1 nA V Unit IR VF - VR = 20 V Forward voltage I F = 100 mA A...


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