Dec 2002
AO8806 Common-Drain Dual N-Channel Enhancement Mode Field Effect
Transistor
General Description
The AO8806 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.
8V.
This device is suitable for use as a uni-directional or bidirectional load switch, facilitated by its commondrain configuration.
Features
VDS (V) = 20V ID = 6 A RDS(ON) 25mΩ (VGS = 4.
5V) RDS(ON) 30mΩ (VGS = 2.
5V) RDS(ON) 40mΩ (VGS = 1.
8V)
TSSOP-8 Top View D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D1/D2 S2 S2 G2 G1 S1
D1
D2
G2 S2
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Co...