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AO8802

ETC
Part Number AO8802
Manufacturer ETC
Description Dual N-Channel MOSFET
Published Mar 26, 2005
Detailed Description August 2002 AO8802 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO8802 ...
Datasheet PDF File AO8802 PDF File

AO8802
AO8802


Overview
August 2002 AO8802 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO8802 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.
8V while retaining a 12V VGS(MAX) rating.
This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration.
Features VDS (V) = 20V ID = 8A RDS(ON) < 13mΩ (VGS = 10V) RDS(ON) < 14mΩ (VGS = 4.
5V) RDS(ON) < 19mΩ (VGS = 2.
5V) RDS(ON) < 27mΩ (VGS = 1.
8V) TSSOP-8 Top View D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D1/D2 S2 S2 G2 G1 S1 D1 D2 G2 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum 20 ±12 8 6.
3 30 1.
5 1.
08 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 64 89 53 Max 83 120 70 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd.
AO8802 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=16V, VGS=0V TJ=55°C VDS=0V, VGS=±12V VDS=VGS ID=250µA VGS=4.
5V, VDS=5V VGS=10V, ID=8A TJ=125°C RDS(ON) Static Drain-Source On-Resistance VGS=4.
5V, ID=5A VGS=2.
5V, ID=4A VGS=1.
8V, ID=3A gFS VSD IS Forward Transconductance VDS=5V, ID=8A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current 0.
5 30 10 13.
3 11.
5 15.
4 22.
2 36 0.
73 1 2.
4 1810 VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz 232 200 1.
6 19.
8 VGS=4.
5V, VDS=10V, ID=8A 1.
8 5 3.
3 VGS=10V, VDS=10V, RL=1.
3Ω, RGEN=3Ω IF=8A, dI/dt=100A/µs 5.
9 44 7.
7 22 9.
8 13 16 14 19 27 0.
75 Min 20 10 25 100 1 Typ Max Units V µA nA V A mΩ mΩ mΩ mΩ S V A pF pF pF Ω nC nC ...


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