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AO8803

Alpha & Omega Semiconductors
Part Number AO8803
Manufacturer Alpha & Omega Semiconductors
Description Dual P-Channel Enhancement Mode Field Effect Transistor
Published Aug 29, 2009
Detailed Description www.DataSheet4U.com AO8803 Dual P-Channel Enhancement Mode Field Effect Transistor General Description The AO8803 uses ...
Datasheet PDF File AO8803 PDF File

AO8803
AO8803

Overview
www.
DataSheet4U.
com AO8803 Dual P-Channel Enhancement Mode Field Effect Transistor General Description The AO8803 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.
8V.
This device is suitable for use as a load switch or in PWM applications.
It is ESD protected.
Standard Product AO8803 is Pb-free (meets ROHS & Sony 259 specifications).
AO8803L is a Green Product ordering option.
AO8803 and AO8803L are electrically identical.
Features VDS (V) = -12V ID = -7 A (VGS = -4.
5V) RDS(ON) < 18mΩ (VGS = -4.
5V) RDS(ON) < 22mΩ (VGS = -2.
5V) RDS(ON) < 29mΩ (VGS = -1.
8V) ESD Rating: 4KV HBM D1 TSSOP-8 Top View D1 S1 S1 G1 1 2 3 4 8 7 6 5 D2 S2 S2 G2 G1 S1 G2 D2 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum -12 ±8 -7 -5.
8 -20 1.
4 0.
9 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 73 96 63 Max 90 125 75 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd.
AO8803 www.
DataSheet4U.
com Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=-250 µA, VGS=0V VDS=-9.
6V, VGS=0V TJ=55°C VDS=0V, VGS=±4.
5V VDS=0V, VGS=±8V VDS=VGS ID=-250 µA VGS=-4.
5V, VDS=-5V VGS=-4.
5V, ID=-7A TJ=125°C RDS(ON) Static Drain-Source On-Resistance VGS=-2.
5V, ID=-6A VGS=-1.
8V, ID=-5A VGS=-1.
5V, ID=-1A gFS VSD IS Forward Transconductance VDS=-5V, ID=-7A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Conti...


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