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AO8801

Alpha & Omega Semiconductors
Part Number AO8801
Manufacturer Alpha & Omega Semiconductors
Description Dual P-Channel Enhancement Mode Field Effect Transistor
Published Aug 29, 2009
Detailed Description www.DataSheet4U.com AO8801 Dual P-Channel Enhancement Mode Field Effect Transistor General Description The AO8801 uses ...
Datasheet PDF File AO8801 PDF File

AO8801
AO8801


Overview
www.
DataSheet4U.
com AO8801 Dual P-Channel Enhancement Mode Field Effect Transistor General Description The AO8801 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.
8V.
This device is suitable for use as a load switch or in PWM applications.
It is ESD protected.
Standard Product AO8801 is Pbfree (meets ROHS & Sony 259 specifications).
AO8801L is a Green Product ordering option.
AO8801 and AO8801L are electrically identical.
Features VDS (V) = -20V ID = -4.
7 A (V GS = -4.
5V) RDS(ON) < 42mΩ (VGS = -4.
5V) RDS(ON) < 53mΩ (VGS = -2.
5V) RDS(ON) < 70mΩ (VGS = -1.
8V) ESD Rating: 3000V HBM TSSOP-8 Top View D1 S1 S1 G1 1 2 3 4 8 7 6 5 D2 S2 S2 G2 G1 D D2 G2 S1 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum -20 ±8 -4.
7 -3.
7 -30 1.
4 0.
9 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 73 96 63 Max 90 125 75 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd.
AO8801 www.
DataSheet4U.
com Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=-250µA, VGS=0V VDS=-16V, VGS=0V TJ=55°C VDS=0V, VGS=±4.
5V VDS=0V, VGS=±8V VDS=VGS ID=-250µA VGS=-4.
5V, VDS=-5V VGS=-4.
5V, ID=-4.
7A Static Drain-Source On-Resistance TJ=125°C VGS=-2.
5V, ID=-4A 8 -0.
3 -25 -0.
55 35 47 44 54 16 -0.
78 Min -20 -1 -5 ±1 ±10 -1 A 42 57 53 70 -1 -2.
2 mΩ mΩ mΩ S V A pF pF pF Ω nC nC nC ns ns ns ns ns nC Typ Max...



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