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AO8804

ETC
Part Number AO8804
Manufacturer ETC
Description Dual N-Channel MOSFET
Published Mar 26, 2005
Detailed Description March 2003 AO8804 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO8804 u...
Datasheet PDF File AO8804 PDF File

AO8804
AO8804

Overview
March 2003 AO8804 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO8804 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.
8V while retaining a 12V VGS(MAX) rating.
It is ESD protected.
This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its commondrain configuration.
Features VDS (V) = 20V ID = 8A RDS(ON) < 13mΩ (VGS = 10V) RDS(ON) < 14mΩ (VGS = 4.
5V) RDS(ON) < 19mΩ (VGS = 2.
5V) RDS(ON) < 27mΩ (VGS = 1.
8V) ESD Rating: 2000V HBM TSSOP-8 Top View D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D1/D2 S2 S2 G2 D1 D2 G1 S1 G2 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum 20 ±12 8 6.
3 30 1.
5 1.
08 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 64 89 53 Max 83 120 70 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd.
AO8804 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=16V, VGS=0V TJ=55°C VDS=0V, VGS=±10V VDS=0V, IG=±250uA VDS=VGS ID=250µA VGS=4.
5V, VDS=5V VGS=10V, ID=8A TJ=125°C RDS(ON) Static Drain-Source On-Resistance VGS=4.
5V, ID=5A VGS=2.
5V, ID=4A VGS=1.
8V, ID=3A gFS VSD IS Forward Transconductance VDS=5V, ID=8A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current ±12 0.
5 30 10 13.
3 11.
5 15.
4 22.
2 36 0.
73 1 2.
4 1810 VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz 232 200 1.
6 17.
9 VGS=4.
5V, VDS=10V, ID=8A 1.
5 4.
7 2.
5 VGS=10V, VDS=10V, RL=1.
2Ω, RGEN=3Ω IF=8A, dI/dt=100A/µs 7.
2 49 10.
8 20.
2 8 13 16 14 19 27 0.
75 1 Min 20 10 2...


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