March 2003
AOP604 Complementary Enhancement Mode Field Effect
Transistor
General Description
The AOP604 uses advanced trench technology to provide excellent R DS(ON) and low gate charge.
The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.
A
Schottky diode in parallel with the n-channel FET reduces body diode related losses.
Features
n-channel p-channel VDS (V) = 30V -30V ID = 7.
5A -6.
6A RDS(ON) 28m Ω 35m Ω (VGS = 10V) 43m Ω 58m Ω (VGS = 4.
5V)
Schottky VDS=30V, I F=3A, VF0.
5V@1A
PDIP-8
S1/A G1 S2 G2 1 2 3 4 8 7 6 5 D1/K D1/K D2 D2
D2
D1 K
N-ch P-ch
G2 S2 G1 S1 A
Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter...