Silicon N-Channel IGBT
ADE–208–274 (Z) 2SH11 Silicon N-Channel IGBT 1st. Edition Feb. 1995 Application TO–220AB High speed power switching Features 2 • High speed switching • Low on saturation voltage 1 1 3 2 3 1. Gate 2. Collector 3. Emitter Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Collector pe...
Hitachi Semiconductor