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2SH12

Hitachi Semiconductor
Part Number 2SH12
Manufacturer Hitachi Semiconductor
Description Silicon N-Channel IGBT
Published Mar 30, 2005
Detailed Description ADE–208–275 (Z) 2SH12 Silicon N-Channel IGBT 1st. Edition Feb. 1995 Application High speed power switching TO–220AB Fe...
Datasheet PDF File 2SH12 PDF File

2SH12
2SH12

Overview
ADE–208–275 (Z) 2SH12 Silicon N-Channel IGBT 1st.
Edition Feb.
1995 Application High speed power switching TO–220AB Features • High speed switching • Low on saturation voltage 1 2 1 3 2 3 1.
Gate 2.
Collector 3.
Emitter Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak current Collector dissipation Channel temperature Storage temperature Symbol VCES Ratings 600 ±20 15 30 60 150 –55 to +150 Unit V V A A W °C °C ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ic(peak) PC* Tj IC VGES ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— Tstg ——————————————————————————————————————————— * Value at Tc = 25°C 1 2SH12 Table 2 Electrical Characteristics (Ta = 25°C) Item Collector to emitter breakdo...


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