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2SH20

Hitachi Semiconductor
Part Number 2SH20
Manufacturer Hitachi Semiconductor
Description Silicon N-Channel IGBT
Published Mar 30, 2005
Detailed Description ADE–208–293 (Z) 2SH20 Silicon N-Channel IGBT 1st. Edition Feb. 1995 Application High speed power switching TO–3P Featu...
Datasheet PDF File 2SH20 PDF File

2SH20
2SH20

Overview
ADE–208–293 (Z) 2SH20 Silicon N-Channel IGBT 1st.
Edition Feb.
1995 Application High speed power switching TO–3P Features • High speed switching • Low on saturation voltage 1 2 3 1 2 3 1.
Gate 2.
Collector 3.
Emitter Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak current Collector dissipation Channel temperature Storage temperature Symbol VCES Ratings 600 ±20 36 60 100 150 –55 to +150 Unit V V A A W °C °C ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ic(peak) PC* Tj IC VGES ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— Tstg ——————————————————————————————————————————— * Value at Tc = 25°C 1 2SH20 Table 2 Electrical Characteristics (Ta = 25°C) Item Collector to emitter breakdown voltage Zero gate voltage collector current Gate to emitter leak current Gate to emitter cutoff current Collector to emitter saturation voltage Collector to emitter saturation voltage Input capacitance Symbol V(BR)CES ICES IGES Min 600 Typ — Max — Unit Test conditions V IC = 100 µA, VGE = 0 VCE = 600 V, VGE = 0 VGE = ±20 V, VCE = 0 ——————————————————————————————————————————— ——————————————————————————————————————————— — — 0.
5 mA ——————————————————————————————————————————— — 3.
0 — — — 1.
5 ±1 6.
0 — µA V V ——————————————————————————————————————————— ——————————————————————————————————————————— VCE(sat)1 VCE(sat)2 Cies IC = 15 A, VGE = 15 V IC = 30 A, VGE = 15 V VCE = 10 V, VGE = 0, f = 1 MHz IC = 30 A, RL = 10 Ω, VGE = ±15 V Rg = 50 Ω VGE(off) IC = 1 mA, VCE = 10 V ——————————————————————————————————————————— — 2.
0 2.
6** V ——————————————————————————————————————————— — 2600 — pF ——————————————————————————————————————————— Switching time ———————————————— ton tf — — — 300 2000 2500 ...


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