DatasheetsPDF.com

2SH14

Hitachi Semiconductor
Part Number 2SH14
Manufacturer Hitachi Semiconductor
Description Silicon N-Channel IGBT
Published Mar 30, 2005
Detailed Description ADE–208–287 (Z) 2SH14 Silicon N-Channel IGBT 1st. Editon Feb. 1995 Application TO–3P High speed power switching Featu...
Datasheet PDF File 2SH14 PDF File

2SH14
2SH14


Overview
ADE–208–287 (Z) 2SH14 Silicon N-Channel IGBT 1st.
Editon Feb.
1995 Application TO–3P High speed power switching Features • High speed switching • Low on saturation voltage 1 2 3 1 2 3 1.
Gate 2.
Collector 3.
Emitter Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak current Collector dissipation Channel temperature Storage temperature Symbol VCES Ratings 600 ±20 30 60 100 150 –55 to +150 Unit V V A A W °C °C ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ic(peak) PC* Tj IC VGES ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— Tstg ——————————————————————————————————————————— * Value at Tc = 25°C 1 2SH14 Table 2 Electrical Characteristics (Ta = 25°C) Item Collector to emitter breakd...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)