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2SH16

Hitachi Semiconductor
Part Number 2SH16
Manufacturer Hitachi Semiconductor
Description Silicon N-Channel IGBT
Published Mar 30, 2005
Detailed Description ADE–208–289 (Z) 2SH16 Silicon N-Channel IGBT 1st. Edition Nov. 1994 Application High speed power switching TO–3PL Fea...
Datasheet PDF File 2SH16 PDF File

2SH16
2SH16

Overview
ADE–208–289 (Z) 2SH16 Silicon N-Channel IGBT 1st.
Edition Nov.
1994 Application High speed power switching TO–3PL Features 2 • High speed switching • Low on saturation voltage 1 3 1 2 1.
Gate 2.
Collector 3.
Emitter 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak current Collector dissipation Channel temperature Storage temperature Symbol VCES Ratings 600 ±20 75 150 200 150 –55 to +150 Unit V V A A W °C °C ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ic(peak) PC* Tj IC VGES ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— Tstg ——————————————————————————————————————————— * Value at Tc = 25°C 1 2SH16 Table 2 Electrical Characteristics (Ta = 25°C) Item Collector to emitter br...


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