Silicon N-Channel IGBT
ADE–208–288 (Z) 2SH15 Silicon N-Channel IGBT 1st. Edition Feb. 1995 Application High speed power switching TO–3P Features • High speed switching • Low on saturation voltage 1 2 3 1 2 3 1. Gate 2. Collector 3. Emitter Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak...
Hitachi Semiconductor