|
Part Number
|
2SH16 |
|
Manufacturer
|
Hitachi Semiconductor |
|
Description
|
Silicon N-Channel IGBT |
|
Published
|
Mar 30, 2005 |
|
Detailed Description
|
ADE–208–289 (Z)
2SH16 Silicon N-Channel IGBT
1st. Edition Nov. 1994 Application
High speed power switching
TO–3PL
Fea...
|
|
Datasheet
|
2SH16
|
Overview
ADE–208–289 (Z)
2SH16 Silicon N-Channel IGBT
1st.
Edition Nov.
1994 Application
High speed power switching
TO–3PL
Features
2
• High speed switching • Low on saturation voltage
1
3
1
2
1.
Gate 2.
Collector 3.
Emitter 3
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak current Collector dissipation Channel temperature Storage temperature Symbol VCES Ratings 600 ±20 75 150 200 150 –55 to +150 Unit V V A A W °C °C
——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ———————————————————————————————————————————
ic(peak) PC* ...
Similar Datasheet