Part Number
|
2SH17 |
Manufacturer
|
Hitachi Semiconductor |
Description
|
Silicon N-Channel IGBT |
Published
|
Mar 30, 2005 |
Detailed Description
|
ADE–208–290 (Z)
2SH17 Silicon N-Channel IGBT
1st. Edition Feb. 1995 Application
TO–220AB
High speed power switching
F...
|
Datasheet
|
2SH17
|
Overview
ADE–208–290 (Z)
2SH17 Silicon N-Channel IGBT
1st.
Edition Feb.
1995 Application
TO–220AB
High speed power switching
Features
2
• High speed switching • Low on saturation voltage
1
1 3 2 3
1.
Gate 2.
Collector 3.
Emitter
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak current Collectorl dissipation Channel temperature Storage temperature Symbol VCES Ratings 600 ±20 12 20 50 150 –55 to +150 Unit V V A A W °C °C
——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ———————————————————————————————————————————
ic(peak) PC* Tj...
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