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Part Number
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2SH20 |
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Manufacturer
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Hitachi Semiconductor |
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Description
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Silicon N-Channel IGBT |
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Published
|
Mar 30, 2005 |
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Detailed Description
|
ADE–208–293 (Z)
2SH20 Silicon N-Channel IGBT
1st. Edition Feb. 1995 Application
High speed power switching
TO–3P
Featu...
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|
Datasheet
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2SH20
|
Overview
ADE–208–293 (Z)
2SH20 Silicon N-Channel IGBT
1st.
Edition Feb.
1995 Application
High speed power switching
TO–3P
Features
• High speed switching • Low on saturation voltage
1 2
3
1
2
3
1.
Gate 2.
Collector 3.
Emitter
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak current Collector dissipation Channel temperature Storage temperature Symbol VCES Ratings 600 ±20 36 60 100 150 –55 to +150 Unit V V A A W °C °C
——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ———————————————————————————————————————————
ic(peak) PC* Tj I...
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