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Part Number
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2SH26 |
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Manufacturer
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Hitachi Semiconductor |
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Description
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N-Channel MOSFET |
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Published
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Mar 30, 2005 |
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Detailed Description
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2SH26
Silicon N Channel IGBT High Speed Power Switching
ADE-208-788A(Z) 2nd. Edition May 1999 Features
• High speed swi...
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Datasheet
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2SH26
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Overview
2SH26
Silicon N Channel IGBT High Speed Power Switching
ADE-208-788A(Z) 2nd.
Edition May 1999 Features
• High speed switching • Low on-voltage
Outline
TO–220AB
C
G
1 E 2 3
1.
Gate 2.
Collector (Flange) 3.
Emitter
2SH26
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to Emitter voltage Gate to Emitter voltage Collector current Collector peak current Collector dissipation Channel temperature Storage temperature Note: 1.
Value at Tc = 25°C Symbol VCES VGES IC ic(peak) PC Tj Tstg
Note1
Ratings 600 ±20 10 20 50 150 –55 to +150
Unit V V A A W °C °C
Electrical Characteristics (Ta = 25°C)
Item Zero gate voltage collector current Gate to emitter leak current Symbol I CES I GES Min — — 6...
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