Part Number
|
2SH30 |
Manufacturer
|
Hitachi Semiconductor |
Description
|
N-Channel MOSFET |
Published
|
Mar 30, 2005 |
Detailed Description
|
2SH30
Silicon N Channel IGBT High Speed Power Switching
ADE-208-792A(Z) 2nd. Edition May 1999 Features
• High speed swi...
|
Datasheet
|
2SH30
|
Overview
2SH30
Silicon N Channel IGBT High Speed Power Switching
ADE-208-792A(Z) 2nd.
Edition May 1999 Features
• High speed switching • Low on-voltage
Outline
TO–3P
C
G
E
1
2
3
1.
Gate 2.
Collector (Flange) 3.
Emitter
2SH30
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to Emitter voltage Gate to Emitter voltage Collector current Collector peak current Collector dissipation Channel temperature Storage temperature Note: 1.
Value at Tc = 25°C Symbol VCES VGES IC ic(peak) PC Tj Tstg
Note1
Ratings 600 ±20 50 100 100 150 –55 to +150
Unit V V A A W °C °C
Electrical Characteristics (Ta = 25°C)
Item Zero gate voltage collector current Gate to emitter leak current Symbol I CES I GES Min — —...
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