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Part Number
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2SH31 |
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Manufacturer
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Hitachi Semiconductor |
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Description
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N-Channel MOSFET |
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Published
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Mar 30, 2005 |
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Detailed Description
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2SH31
Silicon N Channel IGBT High Speed Power Switching
ADE-208-793(Z) 1st. Edition May 1999 Features
• High speed swit...
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Datasheet
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2SH31
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Overview
2SH31
Silicon N Channel IGBT High Speed Power Switching
ADE-208-793(Z) 1st.
Edition May 1999 Features
• High speed switching • Low on-voltage
Outline
TO–3P
C
G
E
1
2
3
1.
Gate 2.
Collector (Flange) 3.
Emitter
2SH31
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to Emitter voltage Gate to Emitter voltage Collector current Collector peak current Collector dissipation Channel temperature Storage temperature Note: 1.
Value at Tc = 25° C Symbol VCES VGES IC ic(peak) PC Tj Tstg
Note1
Ratings 600 ±20 75 150 150 150 −55 to +150
Unit V V A A W °C °C
Electrical Characteristics (Ta = 25°C)
Item Zero gate voltage collector current Gate to emitter leak current I GES 6.
0 ...
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