2SK2315 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 2.
5 V gate drive device can be driven from 3 V source.
Suitable for DC-DC converter, motor drive, power switch, solenoid drive Outline UPAK 2 1 4 3 D G 1.
Gate 2.
Drain 3.
Source 4.
Drain S 2SK2315 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 60 ±20 2 4 2 1 150 –55 to +150 Unit V V A A A W °C °C No...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)