DATA SHEET
MOS FIELD EFFECT
TRANSISTORS
2SK2361/2SK2362
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK2361/2SK2362 is N-Channel MOS Field Effect
Transistor designed for high voltage switching applications.
PACKAGE DIMENSIONS (in millimeter)
4.
7 MAX.
1.
5 7.
0 1.
0±0.
2 5.
45 4.
5±0.
2 0.
6±0.
1 2.
8±0.
1 1.
Gate 2.
Drain 3.
Source 4.
Fin (Drain)
FEATURES
• Low On-Resistance
2SK2361: RDS (on) = 0.
9 Ω (VGS = 10 V, ID = 5.
0 A) 2SK2362: RDS (on) = 1.
0 Ω (VGS = 10 V, ID = 5.
0 A)
1.
0
15.
7 MAX.
4
3.
2±0.
2
• Low Ciss Ciss = 1050 pF TYP.
• High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage (2SK2361/2SK2362) Gate to Source Voltage Drain C...