DATA SHEET
MOS FIELD EFFECT
TRANSISTORS
2SK2365/2SK2366
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK2365, 2SK2365-Z/2SK2366, 2SK2366-Z is N-Channel MOS Field Effect
Transistor designed for high voltage switching
3.
0 ± 0.
3
PACKAGE DIMENSIONS (in millimeters)
10.
6 MAX.
3.
6 ± 0.
2 10.
0
5.
9 MIN.
12.
7 MIN.
15.
5 MAX.
applications.
4.
8 MAX.
1.
3 ± 0.
2
FEATURES
• Low On-Resistance
2SK2365: RDS(on) = 0.
5 Ω (VGS = 10 V, ID = 5.
0 A) 2SK2366: RDS(on) = 0.
6 Ω (VGS = 10 V, ID = 5.
0 A)
4 1 2 3
• Low Ciss Ciss = 1 600 pF TYP.
• High Avalanche Capability Ratings • Isolate TO-220 Package
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage (2SK2365/2SK2366) Gate to Sour...