DATA SHEET
MOS FIELD EFFECT
TRANSISTORS
2SK2367/2SK2368
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK2367/2SK2368 is N-Channel MOS Field Effect
Transistor designed for high voltage switching applications.
PACKAGE DIMENSIONS (in millimeter)
1.
0
15.
7 MAX.
4 3.
2±0.
2 4.
7 MAX.
1.
5
FEATURES
2SK2368: RDS (on) = 0.
6 Ω (VGS = 10 V, ID = 8.
0 A)
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage (2SK2367/2SK2368) Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (Tc = 25 ˚C) Total Power Dissipation (TA = 25 ˚C) Channel Temperature Storage Temperature Single Avalanche Current** Single Avalanche Energy** * PW ≤ 10 µs, Duty Cyc...